Datasheet4U Logo Datasheet4U.com

SSM3J35CT - Silicon P-Channel MOSFET

📥 Download Datasheet

Datasheet preview – SSM3J35CT

📁 Similar Datasheet

  • SSM3J35CTC - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J351R - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J352F - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J355R - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J356R - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J358R - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J35AFS - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J35AMFV - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J326T - Silicon P-Channel MOSFET (Toshiba)
  • SSM3J338R - Silicon P-Channel MOSFET (Toshiba)
Other Datasheets by Toshiba Semiconductor
  • SSM3J353F - Silicon P-Channel MOSFET
  • SSM3J35FS - Silicon P-Channel MOSFET
  • SSM3J35MFV - Silicon P-Channel MOSFET
  • SSM3J304T - Silicon P-Channel MOSFET
  • SSM3J305T - Field-Effect Transistor Silicon P-Channel MOS Type
  • SSM3J306T - Silicon P-Channel MOSFET
  • SSM3J307T - Silicon P-Channel MOSFET
  • SSM3J317T - Power Management Switch Applications High-Speed Switching Applications

Full PDF Text Transcription

Click to expand full text
SSM3J35CT TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J35CT ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2-V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V) Unit: mm Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS -20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP -100 mA -200 Drain power dissipation PD (Note 1) 100 mW CST3 Channel temperature Tch 150 °C JEDEC - Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
Published: |