| Part number | SSM3K04FV |
|---|---|
| Datasheet | SSM3K04FV_ToshibaSemiconductor.pdf |
| File Size | 559.53 KB |
| Manufacturer | Toshiba |
| Description | High Speed Switching Applications |
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SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05 With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive High input impedance 1.2±0.05 0.8±0.05 0.4 Low gate threshold voltage:.
| Part Number | Description |
|---|---|
| SSM3K04FE | High Speed Switching Applications |
| SSM3K04FS | Silicon N-Channel MOSFET |
| SSM3K04FU | High Speed Switching Applications |
| SSM3K01F | Silicon N-Channel MOSFET |
| SSM3K01T | Silicon N-Channel MOSFET |
| SSM3K02F | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| SSM3K02T | High Speed Switching Applications |
| SSM3K03FE | Silicon N-Channel MOS Type FET |
| SSM3K03FV | High Speed Switching Applications |
| SSM3K03TE | High Speed Switching Applications |
