SSM3K04FU Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switch Applications - - - - With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package Unit: mm .. Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 - 55~150 Unit V V m A m W °C °C Note: JEDEC ― Using continuously under heavy loads (e.g. the application of JEITA SC-70 high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2E1E reliability significantly even if the operating conditions (i.e. Weight: 0.006 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Marking Equivalent Circuit 2007-11-01 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance .. Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ⎪Yfs⎪ RDS (ON) Ciss Crss Coss ton toff RGS Test Condition VGS = 10 V, VDS = 0 ID = 100 μA, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 m A VDS = 3 V, ID = 10 m A ID = 10 m A, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 10 m A, VGS = 0~2.5 V VDD = 3 V, ID = 10 m A, VGS = 0~2.5 V VGS = 0~10 V Min ⎯ 20 ⎯ 0.7 25 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 0.7 Typ. ⎯ ⎯...