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SSM3K04FV - High Speed Switching Applications

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Datasheet Details

Part number SSM3K04FV
Manufacturer Toshiba Semiconductor
File Size 559.53 KB
Description High Speed Switching Applications
Datasheet download datasheet SSM3K04FV Datasheet
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SSM3K04FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K04FV High Speed Switching Applications 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05 • • • • With built-in gate-source resistor: RGS = 1 MΩ (typ.) 2.5 V gate drive High input impedance 1.2±0.05 0.8±0.05 0.4 Low gate threshold voltage: Vth = 0.7~1.3 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C 0.5±0.05 0.4 • Optimum for high-density mounting in small packages www.DataSheet4U.com 1 1. Gate 2. Source 3.
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