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SSM3K03FV - High Speed Switching Applications

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Part number SSM3K03FV
Manufacturer Toshiba Semiconductor
File Size 558.18 KB
Description High Speed Switching Applications
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SSM3K03FV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03FV High Speed Switching Applications Analog Switch Applications 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05 Unit: mm • • 2.5 V gate drive 1.2±0.05 0.8±0.05 High input impedance Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C 0.5±0.05 0.4 • Low gate threshold voltage: Vth = 0.7~1.3 V www.DataSheet4U.com • Optimum for high-density mounting in small packages 0.4 1 1.Gate 2.Source 3.Drain VESM JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g.
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