TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3K03FV
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K03FV
High Speed Switching Applications Analog Switch Applications
0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.13±0.05
Unit: mm
• •
2.5 V gate drive
1.2±0.05 0.8±0.05
High input impedance
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range Symbol VDS VGSS ID PD (Note 1) Tch Tstg Rating 20 10 100 150 150 −55~150 Unit V V mA mW °C °C
0.5±0.05
0.4
• Low gate threshold voltage: Vth = 0.7~1.3 V www.DataSheet4U.com • Optimum for high-density mounting in small packages
0.4
1
1.Gate 2.Source 3.Drain VESM JEDEC ―
Note:
JEITA ― Using continuously under heavy loads (e.g.
SSM3K03FV Datasheet
