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SSM3K02T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K02T
High Speed Switching Applications
• • • Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA)
w w w . D a t a S h e e t 4 U . c o m
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±10 2.5 5.0 1250 150 −55~150 Unit V V A mW °C °C
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
JEDEC JEITA
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Note:
Using continuously under heavy loads (e.g.
SSM3K02T Datasheet
