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SSM3K02T - High Speed Switching Applications

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Part number SSM3K02T
Manufacturer Toshiba Semiconductor
File Size 254.85 KB
Description High Speed Switching Applications
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SSM3K02T TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02T High Speed Switching Applications • • • Small package Low on resistance: Ron = 200 mΩ (max) (VGS = 4 V) : Ron = 250 mΩ (max) (VGS = 2.5 V) Low gate threshold voltage: Vth = 0.6~1.1 V (VDS = 3 V, ID = 0.1 mA) w w w . D a t a S h e e t 4 U . c o m Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 30 ±10 2.5 5.0 1250 150 −55~150 Unit V V A mW °C °C Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range JEDEC JEITA ― ― Note: Using continuously under heavy loads (e.g.
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