TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
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SSM3K03TE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K03TE
High Speed Switching Applications Analog Switch Applications
• • • 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Unit: mm
1.2±0.05 0.32±0.05 ３ 0.14±0.05 0.8±0.05
0.45 0.45
1.4±0.05
0.9±0.1
１ ２
www.DataSheet4U.com • Small package
0.59±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C
1. Gate 2. Source 3. Drain
TESM JEDEC ―
Note:
JEITA ― Using continuously under heavy loads (e.g.
SSM3K03TE Datasheet
