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SSM3K03TE - High Speed Switching Applications

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Part number SSM3K03TE
Manufacturer Toshiba Semiconductor
File Size 616.78 KB
Description High Speed Switching Applications
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SSM3K03TE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K03TE High Speed Switching Applications Analog Switch Applications • • • 2.5 V gate drive High input impedance Low gate threshold voltage: Vth = 0.7~1.3 V Unit: mm 1.2±0.05 0.32±0.05 ３ 0.14±0.05 0.8±0.05 0.45 0.45 1.4±0.05 0.9±0.1 １ ２ www.DataSheet4U.com • Small package 0.59±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range Symbol VDS VGSS ID PD Tch Tstg Rating 20 10 100 100 150 −55~150 Unit V V mA mW °C °C 1. Gate 2. Source 3. Drain TESM JEDEC ― Note: JEITA ― Using continuously under heavy loads (e.g.
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