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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01F
SSM3K01F
High Speed Switching Applications
Unit: mm
• Small package • Low on resistance : Ron = 120 mΩ (max) (VGS = 4 V)
: Ron = 150 mΩ (max) (VGS = 2.5 V) • Low gate threshold voltage: Vth = 0.6 to 1.1 V (VDS = 3 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDS
30
V
Gate-source voltage
VGSS
±10
V
Drain current
DC Pulse
ID
1.3
A
IDP
2.6
Drain power dissipation
PD
200
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
TO-236MOD
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEITA
SC-59
temperature, etc.
SSM3K01F Datasheet
