SSM3K05FU Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications - - - Small package Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ±12 400 800 150 150 -55~150 Unit V V m A Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range m W °C °C JEDEC JEITA TOSHIBA ― SC-70 2-2E1E Note 1: Mounted on FR4 board. 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.6 mm ´ 3) Weight: 0.006 g (typ.) Marking Equivalent Circuit Handling Precaution When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that e into direct contact with devices should be made of anti-static materials. 2003-03-28 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS IDSS Vth ïYfsï RDS (ON) Ciss Crss Coss ton toff Test Condition VGS = ±12 V, VDS = 0 ID = 1 m A, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 m A VDS = 3 V, ID = 200 m A ID = 200 m A, VGS = 4 V ID = 200 m A, VGS = 2.5 V VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDS = 3 V, VGS = 0, f = 1 MHz VDD = 3 V, ID = 100 m A, VGS = 0~2.5 V (Note 2) (Note 2) (Note 2) Min ¾ 20 ¾ 0.6 350 ¾ ¾ ¾ ¾ ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ ¾ 0.6 0.85 22 9 21 60 70 Max ±1 ¾ 1 1.1 ¾ 0.8 1.2 ¾ ¾ ¾ ¾ ¾ Unit m A V m A V m S W p F p F p F ns Note 2: Pulse test Switching Time Test Circuit Precaution Vth can...