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SSM3K05FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K05FU
High Speed Switching Applications
· · · Small package Low on resistance : Ron = 0.8 Ω max (@VGS = 4 V) : Ron = 1.2 Ω max (@VGS = 2.5 V) Low gate threshold voltage Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating 20 ±12 400 800 150 150 -55~150 Unit V V mA
Drain power dissipation (Ta = 25°C) Channel temperature Storage temperature range
mW °C °C
JEDEC JEITA TOSHIBA
― SC-70 2-2E1E
Note 1: Mounted on FR4 board. 2 (25.4 mm ´ 25.4 mm ´ 1.6 t, Cu pad: 0.6 mm ´ 3)
Weight: 0.006 g (typ.
SSM3K05FU Datasheet
