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SSM3K01T - Silicon N-Channel MOSFET

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Part number SSM3K01T
Manufacturer Toshiba Semiconductor
File Size 212.25 KB
Description Silicon N-Channel MOSFET
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K01T SSM3K01T High Speed Switching Applications Unit: mm • Small Package • Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V) : Ron = 150 mΩ (max) (@VGS = 2.5 V) • Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V (@VDS = 3 V, ID = 0.1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS 30 V Gate-Source voltage VGSS ±10 V Drain current DC Pulse ID 3.2 IDP (Note 2) 6.4 A Drain power dissipation (Ta = 25°C) PD (Note 1) 1250 mW Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g.
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