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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K01T
SSM3K01T
High Speed Switching Applications
Unit: mm
• Small Package • Low on Resistance: Ron = 120 mΩ (max) (@VGS = 4 V)
: Ron = 150 mΩ (max) (@VGS = 2.5 V) • Low Gate Threshold Voltage: Vth = 0.6 to 1.1 V
(@VDS = 3 V, ID = 0.1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±10
V
Drain current
DC Pulse
ID
3.2
IDP (Note 2)
6.4
A
Drain power dissipation (Ta = 25°C)
PD (Note 1)
1250
mW
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g.
SSM3K01T Datasheet
