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SSM3K09FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K09FU
High Speed Switching Applications
Unit: mm
• Small package • Low on resistance
: Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC
ID
Pulse
IDP
400 mA
800
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
SC-70
high temperature/current/voltage and the significant change in temperature, etc.
SSM3K09FU Datasheet
