SSM3K09FU
SSM3K09FU is Silicon N-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
High Speed Switching Applications
Unit: mm
- Small package
- Low on resistance
: Ron = 0.7 Ω (max) (@VGS = 10 V) : Ron = 1.2 Ω (max) (@VGS = 4 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
Gate-Source voltage
VGSS
±20
Drain current
Pulse
400 m A
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150 m W
Channel temperature
Tch
°C
Storage temperature
Tstg
- 55 to 150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application...