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SSM3K124TU Datasheet - Toshiba Semiconductor

SSM3K124TU - Silicon N-Channel MOSFET

SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications * 4 V drive * Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain *source voltage Gate *source voltage Drain current DC Pulse Drain power dissipation Channel temper.

SSM3K124TU_ToshibaSemiconductor.pdf