Full PDF Text Transcription for SSM3K121TU (Reference)
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SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Lo...
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itch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 140 mΩ (max) (@VGS = 1.5 V) Ron = 93 mΩ (max) (@VGS = 1.8 V) Ron = 63 mΩ (max) (@VGS = 2.5 V) Ron = 48 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 20 V VGSS ± 10 V ID 3.2 A IDP 6.4 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
SSM3K121TU Datasheet
