SSM3K123TU - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K123TU
Manufacturer	Toshiba Semiconductor
File Size	166.71 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K123TU Datasheet
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SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 10 4.2 8.4 800 500 150 −55~150 Unit V V A mW °C °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g.

Published: Feb 14, 2008 |