Full PDF Text Transcription for SSM3K123TU (Reference)
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SSM3K123TU. For precise diagrams, and layout, please refer to the original PDF.
SSM3K123TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K123TU Power Management Switch Applications High-Speed Switching Applications • 1.5 V drive • Lo...
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itch Applications High-Speed Switching Applications • 1.5 V drive • Low ON-resistance: Ron = 66 mΩ (max) (@VGS = 1.5 V) Ron = 43 mΩ (max) (@VGS = 1.8 V) Ron = 32 mΩ (max) (@VGS = 2.5 V) Ron = 28 mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 10 4.2 8.4 800 500 150 −55~150 Unit V V A mW °C °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g.
SSM3K123TU Datasheet
