Full PDF Text Transcription for SSM3K124TU (Reference)
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SSM3K124TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K124TU High Speed Switching Applications • 4 V drive • Low ON-resistance: Ron = 120 mΩ (max) (@V...
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g Applications • 4 V drive • Low ON-resistance: Ron = 120 mΩ (max) (@VGS = 4V) Ron = 83 mΩ (max) (@VGS = 10V) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage Gate–source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 30 V VGSS ± 20 V ID 2.4 A IDP 4.8 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Note 1: Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change i
SSM3K124TU Datasheet
