SSM3K122TU - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	SSM3K122TU
Manufacturer	Toshiba Semiconductor
File Size	328.77 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K122TU Datasheet
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Full PDF Text Transcription

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SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance: Ron = 304 mΩ (max) (@VGS = 1.5 V) Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V) 2.1±0.1 1.7±0.1 Unit: mm 0.3+-00..015 1 2.0±0.1 0.65±0.05 Note 1: For detail information, please contact our sales. 2 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.05 Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDSS 20 V VGSS ± 10 V ID IDP 2.0 4.

Published: Feb 14, 2008 |