Full PDF Text Transcription for SSM3K122TU (Reference)
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SSM3K122TU. For precise diagrams, and layout, please refer to the original PDF.
SSM3K122TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K122TU Power Management Switch Applications High-Speed Switching Applications • AEC-Q101 qualifi...
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itch Applications High-Speed Switching Applications • AEC-Q101 qualified (Note 1) • 1.5 V drive • Low ON-resistance: Ron = 304 mΩ (max) (@VGS = 1.5 V) Ron = 211 mΩ (max) (@VGS = 1.8 V) Ron = 161 mΩ (max) (@VGS = 2.5 V) Ron = 123 mΩ (max) (@VGS = 4.0 V) 2.1±0.1 1.7±0.1 Unit: mm 0.3+-00..015 1 2.0±0.1 0.65±0.05 Note 1: For detail information, please contact our sales. 2 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) 0.7±0.05 Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDSS 20 V VGSS ± 10 V ID IDP 2.
SSM3K122TU Datasheet
