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SSM3K43FS - Silicon N-Channel MOSFET

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SSM3K43FS TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K43FS ○ High-Speed Switching Applications • 1.5-V drive • Low ON-resistance : Ron = 1.52 Ω (max) (@VGS = 1.5V) : Ron = 1.14 Ω (max) (@VGS = 1.8V) : Ron = 0.85 Ω (max) (@VGS = 2.5V) : Ron = 0.66 Ω (max) (@VGS = 4.5V) : Ron = 0.63 Ω (max) (@VGS = 5.0V) Unit: mm Absolute Maximum Ratings (Ta = 25 °C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 20 V Gate-source voltage VGSS ± 10 V Drain current DC ID 500 mA Pulse IDP 1000 Drain power dissipation PD (Note1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C JEDEC ― Note: Using continuously under heavy loads (e.g.
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