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SSM3K44MFV - Silicon N-Channel MOSFET

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SSM3K44MFV TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K44MFV High Speed Switching Applications Analog Switch Applications Unit: mm 0.32±0.05 • AEC-Q101 qualified (Note 1) • Compact package suitable for high-density mounting • Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) 0.22±0.05 1.2±0.05 0.8±0.05 1.2±0.05 0.8±0.05 0.4 0.4 Note 1: For detail information, please contact to our sales. Absolute Maximum Ratings (Ta = 25°C) 1 3 2 0.13±0.05 Characteristics Symbol Rating Unit 0.5±0.05 Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V Drain current DC ID Pulse IDP 100 mA 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW VESM 1. Gate 2. Source 3.
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