SSM6J401TU mosfet equivalent, silicon p-channel mosfet.
(1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 145 mΩ (max) (@VGS = -4 V) RDS(ON) = 73 mΩ (max) (@VGS = -10 V)
3. Packaging and Pin Assignme.
* DC-DC Converters
* High-Speed Switching
2. Features
(1) 4.0 V gate drive voltage. (2) Low drain-source on-resi.
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