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SSM6J410TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅢ)
SSM6J410TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
Unit: mm
• 4-V drive • Low ON-resistance
RDS(ON) = 393mΩ (max) (@VGS = –4 V) RDS(ON) = 216mΩ (max) (@VGS = –10 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGSS
± 20
V
Drain current
DC
ID (Note1)
-2.1
A
Pulse
IDP(Note1)
-4.2
Power dissipation
PD(Note2)
500
mW
t = 10s
1000
1,2,5,6 : Drain
3
: Gate
4
: Source
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g.
SSM6J410TU Datasheet
