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SSM6J414TU - Silicon P-Channel MOSFET

Key Features

  • (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration UF6 SSM6J414TU 1, 2, 5, 6: Drain 3: Gate 4: Source Start of commercial production 2012-06 1 2014-04-04 Rev.4.0 SSM6J414TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit D.

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Datasheet Details

Part number SSM6J414TU
Manufacturer Toshiba
File Size 215.22 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6J414TU Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J414TU 1. Applications • Power Management Switches 2. Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration UF6 SSM6J414TU 1, 2, 5, 6: Drain 3: Gate 4: Source Start of commercial production 2012-06 1 2014-04-04 Rev.4.0 SSM6J414TU 4.