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SSM6J412TU
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM6J412TU
○ Power Management Switch Applications
Unit: mm
+0.1 0.3-0.05
• 1.5-V drive • Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V)
2.1±0.1 1.7±0.1
1
6
2
5
2.0±0.1 1.3±0.1 0.65 0.65
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
3
4
+0.06 0.16-0.05
0.7±0.05
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID
-4.0
A
Pulse
IDP (Note 1)
-16.
SSM6J412TU Datasheet
