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SSM6J401TU - Silicon P-Channel MOSFET

Features

  • (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = -4 V) RDS(ON) = 73 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UF6 SSM6J401TU 1,2,5,6: Drain 3: Gate 4: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-07 2022-07-04 Rev.1.0 SSM6J401TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Drain-source voltage Gate-s.

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Datasheet Details

Part number SSM6J401TU
Manufacturer Toshiba Semiconductor
File Size 438.18 KB
Description Silicon P-Channel MOSFET
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MOSFETs Silicon P-Channel MOS SSM6J401TU 1. Applications • DC-DC Converters • High-Speed Switching 2. Features (1) 4.0 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (max) (@VGS = -4 V) RDS(ON) = 73 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment UF6 SSM6J401TU 1,2,5,6: Drain 3: Gate 4: Source ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-07 2022-07-04 Rev.1.0 SSM6J401TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -30 V VGSS ±20 V Drain current (DC) ID -2.5 A Drain current (pulsed) IDP -5.
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