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SSM6J412TU - Silicon P-Channel MOSFET

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SSM6J412TU TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM6J412TU ○ Power Management Switch Applications Unit: mm +0.1 0.3-0.05 • 1.5-V drive • Low ON-resistance: RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V) 2.1±0.1 1.7±0.1 1 6 2 5 2.0±0.1 1.3±0.1 0.65 0.65 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 3 4 +0.06 0.16-0.05 0.7±0.05 Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID -4.0 A Pulse IDP (Note 1) -16.
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