Full PDF Text Transcription for SSM6K406TU (Reference)
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SSM6K406TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K406TU ○ High-Speed Switching Applications • 4.5-V drive • Low ON-resistance: Ron = 38.5 mΩ (max...
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ing Applications • 4.5-V drive • Low ON-resistance: Ron = 38.5 mΩ (max) (@VGS = 4.5 V) Ron = 25.0 mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 30 V Gate–source voltage VGSS ±20 V Drain current DC ID Pulse IDP 4.4 A 8.8 Drain power dissipation PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
SSM6K406TU Datasheet
