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SSM6K404TU Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-Channel MOS SSM6K404TU 1. Applications • Power Management Switches • High-Speed Switching 2.

Key Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 147 mΩ (max) (@VGS = 1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 70 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit UF6 SSM6K404TU 1: Drain 2: Drain 3: Gate 4: Source 5: Drain 6; Drain ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2007-01 2022-12-01 Rev.1.0 SSM6K404TU 4. Absolute Maximum Ratings (Note) (Unless otherwise spe.

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