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SSM6K406TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6K406TU
○ High-Speed Switching Applications
• 4.5-V drive • Low ON-resistance: Ron = 38.5 mΩ (max) (@VGS = 4.5 V)
Ron = 25.0 mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25˚C)
Characteristics
Symbol
Rating
Unit
Drain–source voltage
VDSS
30
V
Gate–source voltage
VGSS
±20
V
Drain current
DC
ID
Pulse
IDP
4.4 A
8.8
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
SSM6K406TU Datasheet
