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SSM6K504NU - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Note 1) (2) 4.5 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 19.5 mΩ (max) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment UDFN6B SSM6K504NU 1.2.5.6 Drain 3. Gate 4. Source ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-01-18 Rev.3.0 SSM6K504NU 4. Absolute Maximum Ratings (Note) (Unless other.

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Datasheet Details

Part number SSM6K504NU
Manufacturer Toshiba
File Size 259.84 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM6K504NU Datasheet

Full PDF Text Transcription for SSM6K504NU (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SSM6K504NU. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM6K504NU 1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) (2) 4.5 V gate drive voltage. (3) L...

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es (1) AEC-Q101 qualified (Note 1) (2) 4.5 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 26 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 19.5 mΩ (max) (@VGS = 10 V) Note 1: For detail information, please contact our sales. 3. Packaging and Pin Assignment UDFN6B SSM6K504NU 1.2.5.6 Drain 3. Gate 4. Source ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-01-18 Rev.3.0 SSM6K504NU 4.

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