Full PDF Text Transcription for SSM6L12TU (Reference)
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SSM6L12TU. For precise diagrams, and layout, please refer to the original PDF.
SSM6L12TU TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type SSM6L12TU High-Speed Switching Applications • Optimum for high-density mounting in small packages •...
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g Applications • Optimum for high-density mounting in small packages • Low ON-resistance Q1: RDS(ON) = 180mΩ (max) (@VGS = 2.5 V) Q2: RDS(ON) = 430mΩ (max) (@VGS = -2.5 V) Q1 Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Characteristics Symbol Rating Unit Drain-source voltage VDS 30 V Gate-source voltage VGSS ± 12 V Drain current DC ID Pulse IDP 0.5 A 1.5 Q2 Absolute Maximum Ratings (Ta = 25°C) 2.0±0.1 1.3±0.1 0.65 0.65 1 6 2 5 3 4 +0.06 0.16-0.05 0.7±0.05 Characteristics Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage VGSS ± 12 V Drain current DC ID -0.5 A Pulse IDP -1.
SSM6L12TU Datasheet
