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SSM6L35FE
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L35FE
○ High-Speed Switching Applications ○ Analog Switch Applications
• N-ch: 1.2-V drive P-ch: 1.2-V drive
• N-ch, P-ch, 2-in-1 • Low ON-resistance Q1 N-ch: Ron = 20 Ω (max) (@VGS = 1.2 V)
: Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Q2 P-ch: Ron = 44 Ω (max) (@VGS = -1.2 V) : Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V)
0.55±0.05
1.6±0.05 1.0±0.05 0.5 0.5
1.6±0.05 1.2±0.05
Unit: mm
1
6
2
5
3
4
0.12±0.05
0.2±0.
SSM6L35FE Datasheet
