Full PDF Text Transcription for SSM6N39TU (Reference)
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SSM6N39TU. For precise diagrams, and layout, please refer to the original PDF.
SSM6N39TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • • • 1.5-V driv...
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itch Applications ○ High-Speed Switching Applications • • • 1.5-V drive N-ch 2-in-1 Low ON-resistance: Unit: mm 2.1±0.1 1.7±0.1 0.65 0.65 1 2 3 6 5 4 0.166±0.05 Ron = 247mΩ (max) (@VGS = 1.5 V) Ron = 190mΩ (max) (@VGS = 1.8 V) Ron = 139mΩ (max) (@VGS = 2.5 V) Ron = 119mΩ (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25 °C) (Q1,Q2 Common) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ± 10 1.6 3.2 500 150 −55 to 150 Unit V V A mW °C °C 0.7±0.05 1.Source1 2.Gate1 3.
SSM6N39TU Datasheet
