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SSM6N36FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N36FE
○ High-Speed Switching Applications
• 1.5-V drive • Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V)
: Ron = 1.14 Ω (max) (@VGS = 1.8 V) : Ron = 0.85 Ω (max) (@VGS = 2.5 V) : Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
1.6±0.05 1.0±0.05 0.5 0.5
1.6±0.05 1.2±0.05
Unit: mm
1
6
2
5
3
4
0.2±0.05
Characteristics
Symbol
Rating
Unit
0.12±0.05
0.55±0.05
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
500 mA
1000
Drain power dissipation
PD (Note 1)
150
mW
ES6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6N36FE Datasheet
