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SSM6N37FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37FE
○ High-Speed Switching Applications ○ Analog Switching Applications
• • • 1.5-V drive Suitable for high-density mounting due to compact package
1.6±0.05 1.0±0.05 0.5 0.5
: mm
1.6±0.05 1.2±0.05
Low ON-resistance
5 4
3
0.55±0.05
Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse
Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg
Rating 20 ± 10 250 500 150 150 −55 to 150
Unit V V mA mW °C °C
1.Source1 2.Gate1
4.Source2 5.Gate2 6.Drain1
ES6
JEDEC JEITA TOSHIBA
3.Drain2
― ― 2-2N1D
Weight: 3.0 mg (typ.) Note: Using continuously under heavy loads (e.g.
SSM6N37FE Datasheet
