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SSM6N37FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N37FU
○ High Speed Switching Applications ○ Analog Switch Applications
Unit: mm
• 1.5V drive • Low ON-resistance
RDS(ON) = 5.60 Ω (max) (@VGS = 1.5 V) RDS(ON) = 4.05 Ω (max) (@VGS = 1.8 V) RDS(ON) = 3.02 Ω (max) (@VGS = 2.5 V) RDS(ON) = 2.20 Ω (max) (@VGS = 4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
20
V
Gate-Source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
250 mA
500
Power dissipation
PD(Note1)
300
mW
JEDEC
―
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g.
SSM6N37FU Datasheet
