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SSM6N37CTD
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N37CTD
○ Power Management Switch Applications
• 1.5V drive • Low ON-resistance
Ron = 5.60 Ω (max) (@VGS = 1.5 V) Ron = 4.05 Ω (max) (@VGS = 1.8 V) Ron = 3.02 Ω (max) (@VGS = 2.5 V) Ron = 2.20 Ω (max) (@VGS = 4.5 V)
Top View
1.0±0.05 0.15±0.03
65 4
0.05±0.03
Unit: mm
0.6±0.02
0.9±0.05 0.2+±0.03 0.4±0.03
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID
Pulse
IDP
250 mA
500
Drain power dissipation
PD (Note 1)
140
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
1 23
0.35 0.35 ±0.02 ±0.02 0.7±0.03
0.075±0.03
+0.02 0.38
-0.03
CST6D
1.
SSM6N37CTD Datasheet
