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SSM6N36TU
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N36TU
○ High-Speed Switching Applications
• • 1.5-V drive Low ON-resistance: Ron = 1.52 Ω (max) (@VGS = 1.5 V) : Ron = 1.14 Ω (max) (@VGS = 1.8 V)
0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1
Unit: mm
: Ron = 0.66 Ω (max) (@VGS = 4.5 V) : Ron = 0.63 Ω (max) (@VGS = 5.0 V)
2 3
5 4
Characteristics Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature DC Pulse
Symbol VDSS VGSS ID IDP PD (Note 1) Tch Tstg
Rating 20 ± 10 500 1000 500 150 −55 to 150
Unit V V mA mW °C °C
0.7±0.05
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
1.Source1
4.Source2 5.Gate2 6.Drain1
UF6
JEDEC JEITA
2.Gate1 3.
SSM6N36TU Datasheet
