SSM6N55NU Datasheet, Toshiba Semiconductor

(1) (2) 4.5V gate drive voltage. Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Configura.

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* Power Management Switches DC-DC Converters 2. Features (1) (2) 4.5V gate drive voltage. Low drain-source on.