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SSM6N58NU - N-Channel MOSFET

Key Features

  • (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment UDFN6 SSM6N58NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2019-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-11 2021-09-17 Rev.7.0 SSM6N58NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.

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MOSFETs Silicon N-Channel MOS SSM6N58NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 84 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 117 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 180 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Pin Assignment UDFN6 SSM6N58NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2019-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-11 2021-09-17 Rev.7.0 SSM6N58NU 4.