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SSM6N55NU - N-Channel MOSFET

Key Features

  • (1) 4.5V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Assignment UDFN6 SSM6N55NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-11 2024-08-26 Rev.4.0 SSM6N55NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) (Q1,Q2 Common) Characteristics Symbol.

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MOSFETs Silicon N-Channel MOS SSM6N55NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 4.5V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 46 mΩ (max) (@VGS = 10 V) RDS(ON) = 64 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Assignment UDFN6 SSM6N55NU 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2023-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2011-11 2024-08-26 Rev.4.0 SSM6N55NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25�) (Q1,Q2 Common) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) (Note 1) ID 4.