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SSM6N57NU - N-Channel MOSFET

Key Features

  • (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Internal Circuit UDFN6 SSM6N57NU 1. Source1 (S1) 2. Gate1 (G1) 3. Drain2 (D2) 4. Source2 (S2) 5. Gate2 (G2) 6. Drain1 (D1) ©2019-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2021-09-17 Rev.4.0 SSM6N57NU 4. Absolute Maximum Ratings (Note) (Unless o.

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MOSFETs Silicon N-Channel MOS SSM6N57NU 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V) 3. Packaging and Internal Circuit UDFN6 SSM6N57NU 1. Source1 (S1) 2. Gate1 (G1) 3. Drain2 (D2) 4. Source2 (S2) 5. Gate2 (G2) 6. Drain1 (D1) ©2019-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2021-09-17 Rev.4.0 SSM6N57NU 4.