SSM6N57NU
SSM6N57NU is N-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-Channel MOS
1. Applications
- Power Management Switches
- DC-DC Converters
2. Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 39.1 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 53 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 82 mΩ (max) (@VGS = 1.8 V)
3. Packaging and Internal Circuit
UDFN6
1. Source1 (S1) 2. Gate1 (G1) 3. Drain2 (D2) 4. Source2 (S2) 5. Gate2 (G2) 6. Drain1 (D1)
©2019-2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2012-07
2021-09-17 Rev.4.0
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