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SSM6P15FU - P-Channel MOSFET

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SSM6P15FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P15FU High Speed Switching Applications Analog Switch Applications • Small package • Low ON resistance : Ron = 12 Ω (max) (@VGS = −4 V) : Ron = 32 Ω (max) (@VGS = −2.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS −30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID −100 mA IDP −200 Drain power dissipation (Ta = 25°C) PD (Note 1) 200 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 1: Source1 2: Gate1 3: Drain2 4: Source2 5: Gate2 6: Drain1 Note: Using continuously under heavy loads (e.g.
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