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SSM6P16FU - P-Channel MOSFET

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SSM6P16FU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(π-MOSVI) SSM6P16FU High Speed Switching Applications Analog Switch Applications • Small package • Low on-resistance : RDS(ON) = 8 Ω (max) (@VGS = −4 V) : RDS(ON) = 12 Ω (max) (@VGS = −2.5 V) : RDS(ON) = 45 Ω (max) (@VGS = −1.5 V) Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Rating Unit Drain-Source voltage VDS −20 V Gate-Source voltage VGSS ±10 V Drain current Power dissipation DC Pulse ID −100 mA IDP −200 PD(Note1) 200 mW 1: Source1 2: Gate1 3: Drain2 4: Source2 Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C 5: Gate2 6: Drain1 JEDEC ― Note: Using continuously under heavy loads (e.g.
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