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SSM6P54TU - P-Channel MOSFET

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SSM6P54TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P54TU ○ High-Speed Switching Applications ○ Power Management Switch Applications • 1.5 V drive • Suitable for high-density mounting due to compact package • Low on-resistance : Ron = 228 mΩ (max) (@ VGS = -2.5 V) : Ron = 350 mΩ (max) (@ VGS = -1.8 V) : Ron = 555 mΩ (max) (@ VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse VDS -20 V VGSS ±8 V ID -1.2 A IDP -2.4 PD(Note 1) 500 mW Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g.
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