Description
The TC5117400BSJ/BST is the new generation dynamic RAM organized 4,194,304 word by 4 bits.
The TC5117400BSJ/BST utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.
Features
- include single power supply of 5V± 10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. Features.
- 4,194,304 word by 4 bit organization.
- Fast access time and cycle time.
- Single power supply of 5V± 10% with a built-in VBB generator.
- Low Power - 605mW MAX. Operating - (TC5117400BSJ/BST-60) - 523mW MAX. Operating - (TC5117400BSJ/BST-70) - 5.5mW MAX. Standby.
- Outputs unlatched at cycle end allows twodimen.