TC58DVG02A1FT00 - MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Product Overview

Toshiba Semiconductor

Datasheet Details

Part number	TC58DVG02A1FT00
Manufacturer	Toshiba Semiconductor
File Size	511.12 KB
Description	MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC58DVG02A1FT00 Datasheet
Additional preview pages of the TC58DVG02A1FT00 datasheet.

Product details

Description

The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes u 32 pages u 8192 blocks.

Features

x Organization Memory cell allay 528 u 256K u 8 Register 528 u 8 Page size 528 bytes Block size (16K 512) bytes x Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase x Mode control Serial input/output Command control x Power supply VCC 2.7 V to 3.6 V x Program/Erase Cycles 1E5 cycle (with ECC) x Access time Cell array to register 25 Ps max Serial Read Cycle 50 ns min x Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ).

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Published: Aug 25, 2009 |