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Toshiba Electronic Components Datasheet

TH50VSF2580AASB Datasheet

(TH50VSF2580AASB / TH50VSF2581AASB) SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

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TH50VSF2580/2581AASB
TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
DESCRIPTION
The TH50VSF2580/2581AASB is a mixed multi-chip package containing a 4,194,304-bit full CMOS SRAM and a
33,554,432-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.
The power supply for the TH50VSF2580/2581AASB can range from 2.7 V to 3.6 V. The TH50VSF2580/2581AASB
can perform simultaneous read/write operations on its flash memory and is available in a 69-pin BGA package,
making it suitable for a variety of applications.
FEATURES
Power supply voltage
VCCs = 2.7 V~3.6 V
www.DataSheet4U.cDoamVtCaCrfet=e2n.t7ioVn~s3u.6ppVly voltage
VCCs = 1.5 V~3.6 V
Current consumption
Operating: 45 mA maximum (CMOS level)
Standby: 7 µA maximum (SRAM CMOS level)
Standby: 10 µA maximum (flash CMOS level)
Block erase architecture for flash memory
8 blocks of 8 Kbytes
63 blocks of 64 Kbytes
Organization
CIOF CIOS
Flash Memory
SRAM
VCC
VCC
VSS
VCC
VSS
VSS
2,097,152 words of 16 bits
2,097,152 words of 16 bits
4,194,304 words of 8 bits
262,144 words of 16 bits
524,288 words of 8 bits
524,288 words of 8 bits
Function mode control for flash memory
Compatible with JEDEC-standard commands
Flash memory functions
Simultaneous Read/Write operations
Auto-Program
Auto Chip Erase, Auto Block Erase
Auto Multiple-Block Erase
Program Suspend/Resume
Block-Erase Suspend/Resume
Data Polling / Toggle Bit function
Block Protection / Boot Block Protection
Support for automatic sleep and hidden ROM area
Common flash memory interface (CFI)
Byte/Word Modes
Erase and Program cycles for flash memory
105 cycles (typical)
Boot block architecture for flash memory
TH50VSF2580AASB: Top boot block
TH50VSF2581AASB: Bottom boot block
Package
P-FBGA69-1209-0.80A3: 0.31 g (typ.)
PIN ASSIGNMENT (TOP VIEW)
PIN NAMES
CIOF = VCC, CIOS = VCC (×16, ×16)
1 2 3 4 5 6 7 8 9 10
A NC
NC
B NC
NC
C NC
A7 LB WP/ACC WE A8 A11
D A3 A6 UB RESET CE2S A19 A12 A15
E A2 A5 A18 RY/BY A20 A9 A13 NC
F NC A1 A4 A17
A10 A14 NC NC
G NC A0 VSS DQ1
H CEF OE DQ9
DQ3
DQ6 DU A16 NC
DQ4 DQ13 DQ15 CIOF
J CE1S DQ0 DQ10 VCCf VCCs DQ12 DQ7 VSS
K DQ8 DQ2 DQ11 CIOS DQ5 DQ14
L NC
NC
M NC
NC
A0~A21 Address inputs
A12S
A12 input for SRAM
A12F
A12 input for flash memory
SA A18 input for SRAM
DQ0~DQ15 Data inputs/outputs
CE1S , CE2S Chip Enable inputs for SRAM
CEF
Chip Enable input for flash memory
OE Output Enable input
WE Write Enable input
LB , UB Data byte control input
RY/BY
Ready/Busy output
RESET Hardware reset input
WP/ACC Write Protect / Program Acceleration input
CIOS
Word Enable input for SRAM
CIOF
Word Enable input for flash memory
VCCs
VCCf
VSS
NC
Power supply for SRAM
Power supply for flash memory
Ground
Not connected
DU Do not use
000707EBA2
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
2001-10-26 1/50


Toshiba Electronic Components Datasheet

TH50VSF2580AASB Datasheet

(TH50VSF2580AASB / TH50VSF2581AASB) SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE

No Preview Available !

PIN ASSIGNMENT (TOP VIEW)
CIOF = VCC, CIOS = VSS (×16, ×8)
1234
5
6 7 8 9 10
A NC
B NC
C NC
D
E
F NC
G NC
www.DataSheet4U.Hcom
J
K
L NC
M NC
A7 DU WP/ACC WE A8 A11
A3 A6 DU RESET CE2S A19 A12 A15
A2 A5 A18 RY/BY A20 A9 A13 NC
A1 A4 A17
A10 A14 NC
A0 VSS DQ1
CEF OE DQ9
DQ3
DQ6 SA A16
DQ4 DQ13 DQ15 CIOF
CE1S DQ0 DQ10 VCCf VCCs DQ12 DQ7 VSS
DQ8 DQ2 DQ11 CIOS DQ5 DQ14
NC
NC
NC
NC
NC
NC
CIOF = VSS, CIOS = VSS (×8, ×8)
1234
5
6 7 8 9 10
A NC
NC
B NC
NC
C NC
A7 DU WP/ACC WE A8 A11
D A3 A6 DU RESET CE2S A20 A13 A16
E A2 A5 A19 RY/BY A21 A9 A14 NC
F NC A1 A4 A18
A10 A15 NC NC
G NC A0 VSS DQ1
H CEF OE DU
DQ3
DQ4
DQ6 A12S A17
DU A12F CIOF
NC
J CE1S DQ0 DU VCCf VCCs DU DQ7 VSS
K DU DQ2 DU CIOS DQ5 DU
L NC
NC
M NC
NC
Note: A12F and A12S should be wired together and used as a single A12 pin.
TH50VSF2580/2581AASB
000707EBA2
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
2001-10-26 2/50


Part Number TH50VSF2580AASB
Description (TH50VSF2580AASB / TH50VSF2581AASB) SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE
Maker Toshiba Semiconductor
Total Page 30 Pages
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