Datasheet Summary
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TOSHIBA
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
Features
MICROWAVE POWER GaAs FET
HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz
- HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
- -
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
- RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB pression Point Power Gain at 1dB pression Point Drain Current Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 G1dB VDS= 9V 6.5 Two Tone Test P=22dBm
(Single Carrier Level)
SYMBOL P1dB
CONDITION
MIN. TYP. MAX. UNIT 32.5 33.5 7.5 0.85 24 -45 0.85 1.1 1.1 80...