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TIM1011-2L Datasheet, Toshiba Semiconductor

TIM1011-2L fet equivalent, microwave power gaas fet.

TIM1011-2L Avg. rating / M : 1.0 rating-16

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TIM1011-2L Datasheet

Features and benefits

MICROWAVE POWER GaAs FET TIM1011-2L HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz
* HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz
*
* BROAD BAND INTERNALLY .

Application

of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third p.

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