microwave power gaas fet.
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 41.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 9.5dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION
IM3= -47dBc at.
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