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FEATURES
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 45.5dBm at 6.4GHz to 7.2GHz ･HIGH GAIN
G1dB= 8.0dB at 6.4GHz to 7.2GHz ･LOW INTERMODULATION DISTORTION
IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
TIM6472-35SL
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point
Drain Current
Gain Flatness
SYMBOL
CONDITIONS
P1dB
G1dB IDS1 G
VDS= 10V IDSset= 8.0A f = 6.4 to 7.2GHz
UNIT dBm dB
A dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test
dBc
Po= 35.
TIM6472-35SL Datasheet
