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TIM6472-8UL - MICROWAVE POWER GaAs FET

Features

  • n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND.

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www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM6472-8UL TECHNICAL DATA FEATURES n HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two-Tone Test Po= 28.5dBm (Single Carrier Level) (VDS X IDS + Pin – P1dB) X Rth(c-c) SYMBOL P1dB CONDITIONS UNIT dBm MIN. 38.5 8.5    -44   TYP. MAX. 39.5 9.5 2.2  36 -47 2.2    2.6 ±0.6   2.6 80 f = 6.
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